Advancing Silicon Carbide Electronics Technology II


The present volume is the second part of the book “Advancing Silicon Carbide Electronics Technology.” The first part is available at


Advancing Silicon Carbide Electronics Technology II
Core Technologies of Silicon Carbide Device Processing
Eds. Konstantinos Zekentes and Konstantin Vasilevskiy
Materials Research Foundations Vol. 69
Publication Date 2020, 292 Pages
Print ISBN 978-1-64490-066-6 (release date March, 2020)
ePDF ISBN 978-1-64490-067-3
DOI: 10.21741/9781644900673

The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices,  (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses.

Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS)


Table of Contents

Historical Introduction to Silicon Carbide Discovery, Properties and Technology
K. Vasilevskiy, N.G. Wright

Dielectrics in Silicon Carbide Devices: Technology and Application
Anthony O’Neill, Oliver Vavasour, Stephen Russell, Faiz Arith, Jesus Urresti, Peter Gammon

Silicon Carbide Doping by Ion Implantation
Philippe Godignon, Frank Torregrosa, Konstantinos Zekentes

Plasma Etching of Silicon Carbide
K. Zekentes, J. Pezoldt, V. Veliadis

Fabrication of Silicon Carbide Nanostructures and Related Devices
M. Bosi, K. Rogdakis, K. Zekentes

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About the editors

Konstantin Vasilevskiy received his MSc degree in solid-state physics from Moscow Engineering Physics Institute, USSR, in 1981, and his PhD in physics of semiconductors from the Ioffe Institute, St. Petersburg, Russia, in 2002. After graduation in 1981, he spent two years working in material characterisation by Auger spectroscopy at Scientific-Research Technological Institute, Ryazan, USSR. From 1984 to 1988, he was with Scientific Research Institute “Orion”, Kyiv, USSR, where he participated in development and small scale production of silicon IMPATT and microwave p-i-n diodes. In 1989, he joined the Ioffe Institute, where he was heavily involved in gallium nitride growth and characterization as well as in design and fabrication of discrete semiconductor devices based on silicon carbide and III-V nitrides. From 1999 to 2000, he was working in the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Greece as a Visiting Researcher. This work aimed at demonstration of microwave oscillations generated by SiC IMPATT diodes. In 2001, he joined School of Engineering at Newcastle University, United Kingdom, where he is currently a Senior Research Associate. His research at Newcastle University has included in-depth investigation of ohmic and Schottky contacts in SiC devices; development of SiC device processing; design, fabrication and characterization of various SiC devices including trenched-and-implanted JFETs, Schottky diodes, SITs with buried gate formed by deep ion implantation, low voltage Zener diodes; SiC MOSFETs with high‑k dielectric gate stacks. Besides his activity in wide band gap semiconductors, Dr Vasilevskiy also has conducted research in graphene growth and characterization. He developed local graphene growth on silicon carbide from nickel silicide supersaturated with carbon; fabricated top-gated FETs using bilayer epitaxial graphene and demonstrated their operation at elevated temperatures. Dr Vasilevskiy wrote 3 book chapters and 114 papers in refereed journals and conference proceedings. He is a coeditor of four books and co-inventor of 16 patents granted in the field of wide band gap semiconductor technology.

Konstantinos Zekentes received his undergraduate degree in Physics, from the University of Crete, Greece, and his Ph.D., in Physics of Semiconductors, from the University of Montpellier, France. He is currently a Senior Researcher with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece and visiting researcher in the Institut de Microélectronique Electromagnétisme et Photonique et le Laboratoire d’Hyperfréquences et de Caractérisation (IMEP-LaHC) of CNRS/Grenoble INP/UJF/Université de Savoie. The objective of his current work is the development of SiC-related technology for elaborating high power/high frequency devices as well as SiC-based 1D devices. Dr. Zekentes has more than hundred seventy journal and conference publications and one US patent.

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