Study of transport phenomenon in ternary alloys AlGaN, InGaN and InGaN



Abstract. Recent advances in growth and understanding of the physics of III-nitride semiconductor caused a vertiginous expansion of their field of applications. These materials are very useful for the application of ternary and quaternary alloys. They offer a wide variety of compositions to vary their electronic properties. Also, they are of great importance especially in the fields of optoelectronics where they find a very wide scope, since they are commonly used in green LEDs, blue and ultraviolet as well as laser diodes and ultraviolet detectors. In this work, we are interested in the study of transport phenomena in ternary alloys nitride, particularly AlGaN, InGaN and AlGaN, using the Monte Carlo simulation method.

AlGaN, InGaN and AlGaN, Steady, Monte Carlo Simulation Method

Published online 12/10/2016, 5 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: N. BACHIR, N.E. CHABANE SARI, ‘Study of transport phenomenon in ternary alloys AlGaN, InGaN and InGaN’, Materials Research Proceedings, Vol. 1, pp 279-283, 2016

The article was published as article 69 of the book Dielectric Materials and Applications

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