F.Z. BECHLAGHEM, A. GUEN BOUAZZA, B. BOUAZZA, B. BOUCHACHIA
Abstract. In this paper a detailed simulation study is presented, the device characteristics of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) with different gate lengths sheets are comprehensively and systematically investigated. Based on a two-dimensional simulator of Atlas, the detailed calculations and studies including, carrier distributions, and DC and microwave performances are reported . Due to the use of InGaAs DC structure, good pinch-off and saturation characteristics, higher current drivability, larger and linear transconductance correlation has been analyzed for prediction of the impact on device performances.
Component, Pseudomorphic HEMT, Silvaco, Gate Length Scaling
Published online 12/10/2016, 3 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: F.Z. BECHLAGHEM, A. GUEN BOUAZZA, B. BOUAZZA, B. BOUCHACHIA, ‘The study of gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor’, Materials Research Proceedings, Vol. 1, pp 35-37, 2016
The article was published as article 9 of the book Dielectric Materials and Applications
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