The Performance Study of CIGS Solar Cell by SCAPS-1D Simulator
Virang Shukla and Gopal Pandadownload PDF
Abstract: The reference structure was simulated by SCAPS-1D simulator. The simulation result showed the effect of CIGS thickness, band gap and effect of EBR on the cell performance. From the simulation it could be seen that all parameters were sharply affected below CIGS thickness of 1000 nm due to increase of recombination velocity at back contact and poor absorption. Open circuit voltage was improved by CIGS thickness and band gap. Reference structure showed 18.78% efficiency after simulation with CIGS thickness of 3000 nm and band gap of 1.15 eV. The back electron reflector (EBR) had been inserted to reduce the effect of back contact recombination. With EBR cell performance was significantly improved. The proposed structure showed 19.30% efficiency with CIGS thickness of 1000 nm.
Solar Cell, SCAPS-1D Simulator, CIGS Thickness, Band Gap, EBR
Published online 3/25/2022, 10 pages
Copyright © 2022 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: Virang Shukla and Gopal Panda, The Performance Study of CIGS Solar Cell by SCAPS-1D Simulator, Materials Research Proceedings, Vol. 22, pp 70-79, 2022
The article was published as article 10 of the book Functional Materials and Applied Physics
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