The Performance Study of CIGS Solar Cell by SCAPS-1D Simulator

The Performance Study of CIGS Solar Cell by SCAPS-1D Simulator

Virang Shukla and Gopal Panda

download PDF

Abstract: The reference structure was simulated by SCAPS-1D simulator. The simulation result showed the effect of CIGS thickness, band gap and effect of EBR on the cell performance. From the simulation it could be seen that all parameters were sharply affected below CIGS thickness of 1000 nm due to increase of recombination velocity at back contact and poor absorption. Open circuit voltage was improved by CIGS thickness and band gap. Reference structure showed 18.78% efficiency after simulation with CIGS thickness of 3000 nm and band gap of 1.15 eV. The back electron reflector (EBR) had been inserted to reduce the effect of back contact recombination. With EBR cell performance was significantly improved. The proposed structure showed 19.30% efficiency with CIGS thickness of 1000 nm.

Solar Cell, SCAPS-1D Simulator, CIGS Thickness, Band Gap, EBR

Published online 3/25/2022, 10 pages
Copyright © 2022 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA

Citation: Virang Shukla and Gopal Panda, The Performance Study of CIGS Solar Cell by SCAPS-1D Simulator, Materials Research Proceedings, Vol. 22, pp 70-79, 2022


The article was published as article 10 of the book Functional Materials and Applied Physics

Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

[1] J. Song, S. S. Li, C. H. Huang, O. D. Crisalle, and T. J. Anderson, “Device modeling and simulation of the performance of Cu (In1−xGax)Se2 solar cells,” Solid-State Electronics, vol. 48, no. 1, 2004, pp. 73–79.
[2] Y. Hagiwara, T. Nakada, and A. Kunioka, “Improved Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer,” Solar Energy Materials and Solar Cells, vol. 67, no. 1–4, 2001, pp. 267–271.
[3] A. M. K. Dagamseh, B. Vet, P. Šutta, and M. Zeman, “Modelling and optimization of a-Si:H solar cells with ZnO:Al back reflector,” Solar Energy Materials and Solar Cells, vol. 94, no. 12, 2010, pp. 2119–2123.
[4] P. A. Basore and D. A. Clugston, “PC1D version 4 for windows: from analysis to design,” in Proceedings of the 25th IEEE Photovoltaic Specialists Conference, May 1996, pp. 377–381.
[5] M. Gloeckler, A. L. Fahrenbruch, and J. R. Sites, “Numerical modeling of CIGS and CdTe solar cells: setting the baseline,” in Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, May 2003, pp. 491–494.
[6] O. Lundberg, M. Bodegård, J. Malmström, and L. Stolt, “Influence of the Cu(In, Ga)Se2 thickness and Ga grading on solar cell performance,” Progress in Photovoltaics, vol. 11, no. 2, 2003,pp. 77–88.
[7] P. Chelvanathan, M. I. Hossain, and N. Amin, “Performance analysis of copper-indium-gallium-diselenide (CIGS) solar cells with various buffer layers by SCAPS,” Current Applied Physics, vol. 10, no. 3, 2010, pp. S387–S391.
[8] O. Lundberg, M. Edoff, and L. Stolt, “The effect of Ga-grading in CIGS thin film solar cells,” Thin Solid Films, vol. 480-481,2005, pp. 520–525.
[9] G. Hanna, A. Jasenek, U. Rau, and H. W. Schock, “Influence of the Ga-content on the bulk defect densities of Cu(In,Ga)Se2,” Thin Solid Films, vol. 387, no. 1-2, 2001, pp. 71–73.
[10]T. Minemoto, T. Matsui, H. Takakura et al., “Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation,” Solar Energy Materials and Solar Cells, vol. 67, no. 1–4, 2001, pp. 83–88.
[11] C.-H. Huang, “Effects of Ga content on Cu(In,Ga)Se2 solar cells studied by numerical modeling,” Journal of Physics and Chemistry of Solids, vol. 69, no. 2-3, 2008, pp. 330–334.
[12] R. Kniese, D. Hariskos, G. Voorwinden, U. Rau, and M. Powalla, “High band gap Cu(In,Ga)Se2 solar cells and modules prepared with in-line co-evaporation,” Thin Solid Films, vol. 431-432, 2003, pp. 543–547.
[13] N. Amin, P. Chelvanathan, M. I. Hossain, and K. Sopian, “Numerical modelling of ultra thin Cu(In,Ga)Se2 solar cells,” in Proceedings of the 6th International Conference on Materials for Advanced Technologies (ICMAT ’11), July 2011, pp. 291–298.
[14] U. Rau, M. Schmidt, A. Jasenek, G. Hanna, and H. W. Schock, “Electrical characterization of Cu(In,Ga)Se2 thin-film solar cells and the role of defects for the device performance,” Solar Energy Materials and Solar Cells, vol. 67, no. 1–4, 2001, pp. 137–143.
[15] Z. J. L. Kao, N. Naghavi, F. Erfurth et al., “Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering,” Progress in Photovoltaics, vol. 20, 2012, pp. 582–587.
[16] A. Kanevce, Anticipated performance of Cu(In, Ga)Se2 solar cells in the thin-film limit [Doctoral thesis], Colorado State University, (2007).
[17] S. Singh, S. Kumar, and N. Dwivedi, “Band gap optimization of p-i-n layers of a-Si:H by computer aided simulation for development of efficient solar cell,” Solar Energy, vol. 86, no. 5, 2012, pp. 1470–1476.
[18] N. Hernández-Como and A. Morales-Acevedo, “Simulation of hetero-junction silicon solar cells with AMPS-1D,” Solar Energy Materials and Solar Cells, vol. 94, no. 1, 2010, pp. 62–67.
[19] A. Niemegeers, S. Gillis, and M. Burgelman, “A user program for realistic simulation of polycristalline heterojunction solar cells: SCAPS-1D,” in Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, Wien, July 1998.
[20] R. Scheer, “Towards an electronic model for Culn1−xGaxSe2 solar cells,” Thin Solid Films, vol. 519, no. 21, 2011, pp. 7472–7475.
[21] A. Bouloufa, K. Djessas, and A. Zegadi, “Numerical simulation of CulnxGa1−xSe2 solar cells by AMPS-1D,” Thin Solid Films, vol. 515, no. 15, 2007, pp. 6285–6287.
[22] S. Degrave, M. Burgelman, and P. Nollet, “Modelling of polycrystalline thin film solar cells: new features in scaps version 2.3,” in Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, May 2003, pp. 487–490.
[23] J. Pettersson, C. Platzer-Björkman, U. Zimmermann, and M. Edoff, “Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1−xMgxO buffer layers,” Thin Solid Films, vol. 519, no.21, 2011, pp. 7476–7480.
[24] Z. Jehl, F. Erfurth, N. Naghavi et al., “Thinning of CIGS solar cells: part II: cell characterizations,” Thin Solid Films, vol. 519, no. 21, 2011, pp. 7212–7215.
[25] M. Gloeckler and J. R. Sites, “Potential of sub micrometer thickness Cu (In,Ga) Se2 solar cells,” Journal of Applied Physics, vol. 98, no. 10, Article ID 103703, 2005, pp. 1–7.
[26] P. Jackson, D. Hariskos, E. Lotter et al., “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Progress in Photovoltaics, vol. 19, no. 7, 2011, pp. 894–897.
[27] T. M. Razykov, C. S. Ferekides, D. Morel, E. Stefanakos, H. S. Ullal, and H. M. Upadhyaya, “Solar photovoltaic electricity: current status and future prospects,” Solar Energy, vol. 85, no. 8, 2011, pp. 1580–1608.
[28] S.ouedraogo,F.Zougmore,J.M.Ndjaka, “Numerical analysis of Copper-Indium-Gallium-Diselenide based solar cell by SCAPS-1D”,International Journal of Photoenergy,vol.2013.