Studies of SnS thin films grown by SILAR method


Y. Qachaou, A. Raidou, K. Nouneh, M. Lharch, A. Qachaou, M. Fahoume, L. Laanab

Abstract. Tin sulfide is a promising optoelectronic material which has a particular interest due to its absorption coefficient, a direct bandgap 1.7 eV and its non-toxic components. SnS thin films were deposited on glass substrates by successive ionic layer adsorption and reaction (SILAR) method. The cationic and anionic solutions are SnCl2.2H2O and Na2S.9H2O respectively, were used as precursors materials. The structure, film composition, morphology, and optical properties were investigated by using X-ray diffraction, energy dispersive X-ray analysis, Scanning electron microscopy (EDX-SEM) and spectrophotometer. X-ray diffraction (XRD) patterns indicated that the deposited SnS thin films have orthorhombic crystal structure. Uniform deposition of the material over the entire glass substrate was showed by Scanning electron microscopy (SEM). The optical band gap energy was found to be 1.7 eV.

SILAR, SnS, Tin Sulfide, Thin Films

Published online 12/10/2016, 4 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: Y. Qachaou, A. Raidou, K. Nouneh, M. Lharch, A. Qachaou, M. Fahoume, L. Laanab, ‘Studies of SnS thin films grown by SILAR method’, Materials Research Proceedings, Vol. 1, pp 275-278, 2016

The article was published as article 68 of the book Dielectric Materials and Applications

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