Advancing Silicon Carbide Electronics Technology I

$125.00

The rapidly advancing Silicon Carbide technology has demonstrated a great potential in high-power low-loss semiconductor electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for development of high temperature electronics and semiconductor devices operating in harsh environment.

$125.00
$125.00

Advancing Silicon Carbide Electronics Technology I
Metal Contacts to Silicon Carbide: Physics, Technology, Applications
Eds. Konstantinos Zekentes and Konstantin Vasilevskiy
Materials Research Foundations Volume 37
Publication Date 2018, 250 Pages
Print ISBN  9781945291845 (release date September 20th, 2018)
ePDF ISBN 9781945291852
DOI: 10.21741/9781945291852

The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Keywords
Silicon Carbide Technology, Semiconductor Devices, SiC Device Fabrication, SiC Device Characterization, SiC Surface Cleaning, SiC Surface Etching, Electrical Characterization of SiC, Ohmic Contacts to SiC, Contact Resistivity Analysis, Ohmic Contact Fabrication, Metallization Schemes, Thermal Stability of Ohmic Contacts to SiC, Schottky Contacts to SiC, Schottky Barrier Formation, Schottky Diodes, Junction Barrier Schottky Diodes, Si/ SiC Heterojunction Diodes, Schottky Barrier Inhomogeneity in SiC, SiC Power Electronics, Temperature/Light Sensors, SiC Switching Devices, High Temperature Electronics, High Frequency Electronics, Thermal Stability of SiC

Citation: Advancing Silicon Carbide Electronics Technology I, K. Zekentes, K. Vasilevskiy (Eds.), Materials Research Forum LLC, Millersville, 2018, Doi: 10.21741/9781945291852

Table of contents


Silicon Carbide Surface Cleaning and Etching
V. Jokubavicius, M. Syväjärvi, R. Yakimova


Processing and Characterisation of Ohmic Contacts to Silicon Carbide
K. Vasilevskiy, K. Zekentes, N. Wright


Schottky Contacts to Silicon Carbide: Physics, Technology and Applications
F. Roccaforte, G. Brezeanu, P. M. Gammon, F. Giannazzo, S. Rascunà, M. Saggio


Status and Prospects of SiC Power Devices
M. Bakowski

 

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About the Editors

Konstantin Vasilevskiy received his MSc degree in solid-state physics from Moscow Engineering Physics Institute, USSR, in 1981. He started his research activity with characterisation of pure materials and compound semiconductors by Auger spectroscopy. In 1884, he joined Scientific-Research Institute “Orion”, Kiev, USSR, where he conducted research and development on silicon IMPATT and p-i-n diodes. In 1988, he joined Ioffe Institute, St. Petersburg, Russia, where he started his research activity in physics and technology of wide band gap semiconductor devices. In 2002, Dr Vasilevskiy received his Ph.D. degree in physics of semiconductors for the demonstration of microwave oscillations in SiC IMPATT diodes. He is currently Senior Research Associate at the School of Engineering at Newcastle University, United Kingdom.  His main research activity is focused in design, fabrication and characterization of various silicon carbide devices. He has authored over 100 scientific publications. He is a co-inventor of 16 patents granted in the field of wide band bap semiconductor technology.

 

Konstantinos Zekentes received his undergraduate degree in Physics, from the University of Crete, Greece, and his Ph.D., in Physics of Semiconductors, from the University of Montpellier, France. He is currently a Senior Researcher with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece and visiting researcher in the Institut de Microélectronique Electromagnétisme et Photonique et le Laboratoire d’Hyperfréquences et de Caractérisation (IMEP-LaHC) of CNRS/Grenoble INP/UJF/Université de Savoie. The objective of his current work is the development of SiC-related technology for elaborating high power/high frequency devices as well as SiC-based 1D devices. Dr. Zekentes has more than one hundred and seventy journal and conference publications and one US patent.