Study of transport phenomenon in ternary alloys AlGaN, InGaN and InGaN

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N. BACHIR, N.E. CHABANE SARI

Abstract. Recent advances in growth and understanding of the physics of III-nitride semiconductor caused a vertiginous expansion of their field of applications. These materials are very useful for the application of ternary and quaternary alloys. They offer a wide variety of compositions to vary their electronic properties. Also, they are of great importance especially in the fields of optoelectronics where they find a very wide scope, since they are commonly used in green LEDs, blue and ultraviolet as well as laser diodes and ultraviolet detectors. In this work, we are interested in the study of transport phenomena in ternary alloys nitride, particularly AlGaN, InGaN and AlGaN, using the Monte Carlo simulation method.

Keywords
AlGaN, InGaN and AlGaN, Steady, Monte Carlo Simulation Method

Published online 12/10/2016, 5 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: N. BACHIR, N.E. CHABANE SARI, ‘Study of transport phenomenon in ternary alloys AlGaN, InGaN and InGaN’, Materials Research Proceedings, Vol. 1, pp 279-283, 2016
DOI: http://dx.doi.org/10.21741/9781945291197-69

The article was published as article 69 of the book Dielectric Materials and Applications

References
[1] Rosen G, Materiaux pour l’Optoelectronique, Traite EGEM serie Optoelectronique, tome 7, (Hermes Science Publications), Paris, 2003
[2] Fabrice Enjalbert, Etude des hétérostructures semi-conductrices III-nitrures et application au laser UV pompé par cathode à micropointes, these de doctorat, l’U. Grenoble 1, 2004.
[3] Semiconductors: Data Handbook, 3rd Ed., edited by O. Madelung_Springer, Berlin, 2004.
[4] I. Vurgaftman and J. R. Meyer, Journal of Applied Phyisics 94, 3675; 2003. http://dx.doi.org/10.1063/1.1600519
[5] I. Vurgaftman, J. R. Meyer, et L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys, Journal of Applied Physics. 89, 5815; 2001. http://dx.doi.org/10.1063/1.1368156
[6] Fei Wang, Shu-Shen Li, and Jian-Bai Xia, H. X. Jiang and J. Y. Lin, Jingbo Li and Su-Huai Wei, Effects of the wave function localization in AlInGaN quaternary alloys, APPLIED PHYSICS LETTERS, 2007. http://dx.doi.org/10.1063/1.2769958
[7] K. Kubota, Y. Kobayashi, and K. Fujimoto, J. Appl. Phys. 66, 2984 -1989
[8] J. Zimmermann, etude par la methode de Monte Carlo des phenomenes de transport electronique dans le Silicium de type N en regimes stationnaire et non stationnaire. Application a la simulation des composants submicroniques, These de doctorat d’etat, U.de Lille 1,1980.
[9] T. Kurosawa, Journal of the physical society of Japan, supplement 21; 1966; 424
[10] P. J. Price, IBM Journal of Research and Development, Vol 17 ; 1973; 39. http://dx.doi.org/10.1147/rd.171.0039