T. BOURAGBA, M. MIHAILOVC, J. LEYMARIE
Abstract. Nitride alloys GaInAsN and GaInNAsSb are an exciting new generation of semiconductors based on combined GaN (Wutzite crystal) with GaAs (Sb) (Zincblend crystal). Nowadays it is possible to achieve good qualities of dilute nitride films with 1 eV band gap taking advantage from lattice-matched to gallium arsenide and Germanium. In this paper, we provide explanation to some anomalous nitride phenomena such blueshift of the Photoluminescence (PL) energy after annealing and the Stoke’s shift observed between absorption and emission spectra, band gap energies of both GaInAsN and GaAs:N
Keywords
Component 10 Band kp Model, Dilute Nitride Materials, GaInAsN, GaInNAsN, Photoluminescence, Solar Cells, TDOA
Published online 12/10/2016, 5 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: T. BOURAGBA, M. MIHAILOVC, J. LEYMARIE, ‘Dilute nitride GaInAsN: a promising material for concentrator photovoltaic cells’, Materials Research Proceedings, Vol. 1, pp 256-260, 2016
DOI: http://dx.doi.org/10.21741/9781945291197-64
The article was published as article 64 of the book Dielectric Materials and Applications
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