S. GOUDER, L. TEBESSI, R. MAHAMDI, S. ESCOUBAS, L. FAVRE, M. AOUASSA, A. RONDA, I. BERBEZIER
Abstract. Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by high resolution X-ray diffraction and transmission electron microscopy. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.
Double Layer, Porous Silicon, Molecular Beam Epitaxy, Transmission Electron Microscopy, High Resolution X-Ray Diffraction
Published online 12/10/2016, 4 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: S. GOUDER, L. TEBESSI, R. MAHAMDI, S. ESCOUBAS, L. FAVRE, M. AOUASSA, A. RONDA, I. BERBEZIER, ‘TEM and XRD characterizations of epitaxial silicon layer fabricated on double layer porous silicon’, Materials Research Proceedings, Vol. 1, pp 249-252, 2016
The article was published as article 62 of the book Dielectric Materials and Applications
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