O. MEKNI, D. GOEURIOT, S. JOAO SAO, C. MEUNIER, B. ASKRI, K. RAOUADI, G. DAMAMME
Abstract. The choice of insulating material for applications requiring an electrical insulation matter in the field of microelectronics (e.g substrate) or high-voltage energy transport is related to the corresponding breakdown voltage value which limits their use in some applications. To improve the resistance to dielectric breakdown, it is imperative to understand and control the cause of this catastrophic phenomenon reducing the reliability of some instrumentation. It is well known that breakdown is correlated with the presence of space charge within the insulators. In this context, we are interested in this work to characterize the trapped charge and its stability in ZrO2/Y2O3 sintered polycrystalline ceramic using a special arrangement in the SEM chamber. The firing temperature effect is studied and discussed.
Ceramics, Space Charge, Dielectric Breakdown, Trapping, SEM
Published online 12/10/2016, 4 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: O. MEKNI, D. GOEURIOT, S. JOAO SAO, C. MEUNIER, B. ASKRI, K. RAOUADI, G. DAMAMME, ‘Charging process and trapped charge characterization in insulating materials using an influence current method (ICM) in adapted SEM’, Materials Research Proceedings, Vol. 1, pp 167-170, 2016
The article was published as article 42 of the book Dielectric Materials and Applications
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