Charging process and trapped charge characterization in insulating materials using an influence current method (ICM) in adapted SEM

$15.00

O. MEKNI, D. GOEURIOT, S. JOAO SAO, C. MEUNIER, B. ASKRI, K. RAOUADI, G. DAMAMME

Abstract. The choice of insulating material for applications requiring an electrical insulation matter in the field of microelectronics (e.g substrate) or high-voltage energy transport is related to the corresponding breakdown voltage value which limits their use in some applications. To improve the resistance to dielectric breakdown, it is imperative to understand and control the cause of this catastrophic phenomenon reducing the reliability of some instrumentation. It is well known that breakdown is correlated with the presence of space charge within the insulators. In this context, we are interested in this work to characterize the trapped charge and its stability in ZrO2/Y2O3 sintered polycrystalline ceramic using a special arrangement in the SEM chamber. The firing temperature effect is studied and discussed.

Keywords
Ceramics, Space Charge, Dielectric Breakdown, Trapping, SEM

Published online 12/10/2016, 4 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: O. MEKNI, D. GOEURIOT, S. JOAO SAO, C. MEUNIER, B. ASKRI, K. RAOUADI, G. DAMAMME, ‘Charging process and trapped charge characterization in insulating materials using an influence current method (ICM) in adapted SEM’, Materials Research Proceedings, Vol. 1, pp 167-170, 2016
DOI: http://dx.doi.org/10.21741/9781945291197-42

The article was published as article 42 of the book Dielectric Materials and Applications

References
[1] N. Bourne, Materials in Mechanical Extremes: Fundamentals and Applications, Cambridge University Press, Cambridge, UK, 2013. http://dx.doi.org/10.1017/CBO9781139152266
[2] R. Stoklas, D Gregušová, K Hušeková, J Marek and P Kordoš, Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator, Semicond. Sci. Technol., 29 (2014) 4. http://dx.doi.org/10.1088/0268-1242/29/4/045003
[3] T. Paulmier, B. Dirassen, M. Belhaj, and D. Rodgers, Charging properties of space used dielectric materials, IEEE Trans. Plasma Sci., 43 (2015) 9. http://dx.doi.org/10.1109/TPS.2015.2453012
[4] C. Bonnelle, G. Blaise, C. Le Gressus, D. Tréheux, Physique de la localisation des porteurs de charge, Applications aux phénomènes d’endommagement, Les isolants, Lavoisier, 2010.
[5] G. Blaise, C. Le Gressus, Flashover in insulators related to the destabilization of a localized space charge, C. R. Acad. Sci. Paris, 314 (1992) 1017-1024.
[6] G. Blaise, Charge detrapping induced dielectric relaxation. Application to breakdown in insulating films, Microelectron. Eng. 28 (1995) 55-62.
http://dx.doi.org/10.1016/0167-9317(95)00015-Z