R. MAHAMDI, S. GOUDER, S. ESCOUBAS, L. FAVRE, M. AOUASSA, A. RONDA, I. BERBEZIER
Abstract. In this study, single crystal Ge layers have been deposited by molecular beam epitaxy on PSi substrate, with different thicknesses (40 nm and 80 nm) at the growth temperature of 400°C. Raman and Atomic force microscopy (AFM) have been applied for investigation of photoluminescence, structural and morphological properties of the Ge on PSi layers. The results show a stronger Raman intensity of PSi due to change of its optical constant. Similarly the Si/Ge/PSi sample shows a peak at 399 cm-1 but with lower intensity compared with that of PSi probably due to the Si emission partially covered by the Ge inside the pores. Besides that a sharp Raman peak at 298 cm-1 is observed which reflects Raman active transverse optical mode of the introduced Ge which indicates the growth of Ge with good crystallinity. AFM characterization shows the rough silicon surface which can be regarded as a condensation point for small skeleton clusters to form, with different size of pores. These changes are highly responsible for its photoluminescence in the red wavelength range. This study explores the applicability of prepared Ge/PSi layers for its various applications in advanced optoelectronics field and silicon-on-insulator applications.
Porous Silicon, Germanium, Raman Spectroscopy, AFM, Nanostructure
Published online 12/10/2016, 3 pages
Copyright © 2016 by the author(s)
Published under license by Materials Research Forum LLC., Millersville PA, USA
Citation: R. MAHAMDI, S. GOUDER, S. ESCOUBAS, L. FAVRE, M. AOUASSA, A. RONDA, I. BERBEZIER, ‘Ge on porous silicon/Si substrate analysed by Raman spectroscopy and atomic force microscopy’, Materials Research Proceedings, Vol. 1, pp 151-153, 2016
The article was published as article 38 of the book Dielectric Materials and Applications
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